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  MMBD6050LT1 monolithic du al swit ching diode absolute maximum ra tings at t a =25 ch aracteristic sy mb o l ratin g un it reverse v o ltage v r 70 vdc f o rw ard current i f 200 vdc peak f o rw ard surge current i fm (surge) 500 madc t o tal device dissipation fr-5 board(note) derate above 25 p d 225 1.8 mw mw/ junction t e mperature t j 150 storage t e mperature t s tg -55-150 package: sot-23 electrical characteristics at t a =25 ch aracteristic sy mb o l min max un it reverse breakdow n v o ltage(i r = 100uadc) v (b r) 75 vdc reverse v o ltage leakage current (v r = 50vdc) i r 0.1 uadc diode capacitance(v r = 0 f= 1.0mhz) c t pf f o rw ard v o ltage (i f =1.0madc) (i f = 100madc) v f 0.55 0.85 0.7 1.1 vdc reverse recovery t i me(i f =i r = 10madc) t rr 2.5 ns note:fr-5=1.0 0.75 0.062in dvice marking: mmbd6050l t 1 = 5 a http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd


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